 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| BUP 305 D IGBT With Antiparallel Diode Preliminary data * Low forward voltage drop * High switching speed * Low tail current * Latch-up free * Including fast free-wheel diode Pin 1 G Pin 2 C Pin 3 E Type BUP 305 D Maximum Ratings Parameter Collector-emitter voltage Collector-gate voltage VCE IC Package TO-218 AB Ordering Code Q67040-A4225-A2 1200V 12A Symbol Values 1200 1200 Unit V VCE VCGR VGE IC RGE = 20 k Gate-emitter voltage DC collector current 20 A 12 8 TC = 25 C TC = 90 C Pulsed collector current, tp = 1 ms ICpuls 24 16 TC = 25 C TC = 90 C Diode forward current IF 8 TC = 90 C Pulsed diode current, tp = 1 ms IFpuls 48 TC = 25 C Power dissipation Ptot 100 W -55 ... + 150 -55 ... + 150 C TC = 25 C Chip or operating temperature Storage temperature Tj Tstg Semiconductor Group 1 Dec-02-1996 BUP 305 D Maximum Ratings Parameter DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Thermal Resistance Thermal resistance, chip case Diode thermal resistance, chip case Symbol Values E 55 / 150 / 56 Unit - RthJC RthJCD 1 3.1 K/W Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Symbol min. Static Characteristics Gate threshold voltage Values typ. max. Unit VGE(th) 4.5 5.5 2.8 3.8 6.5 3.3 4.3 V VGE = VCE, IC = 0.3 mA, Tj = 25 C Collector-emitter saturation voltage VCE(sat) - VGE = 15 V, IC = 5 A, Tj = 25 C VGE = 15 V, IC = 5 A, Tj = 125 C Zero gate voltage collector current ICES 0.35 mA nA 100 VCE = 1200 V, VGE = 0 V, Tj = 25 C Gate-emitter leakage current IGES VGE = 20 V, VCE = 0 V AC Characteristics Transconductance gfs 1.7 2.5 650 50 20 - S pF 800 80 30 VCE = 20 V, IC = 5 A Input capacitance Ciss Coss - VCE = 25 V, VGE = 0 V, f = 1 MHz Output capacitance VCE = 25 V, VGE = 0 V, f = 1 MHz Reverse transfer capacitance Crss - VCE = 25 V, VGE = 0 V, f = 1 MHz Semiconductor Group 2 Dec-02-1996 BUP 305 D Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Symbol min. Switching Characteristics, Inductive Load at Tj = 125 C Turn-on delay time Values typ. max. Unit td(on) 30 50 ns VCC = 600 V, VGE = 15 V, IC = 5 A RGon = 68 Rise time tr 20 30 nS VCC = 600 V, VGE = 15 V, IC = 5 A RGon = 68 Turn-off delay time td(off) 180 270 ns VCC = 600 V, VGE = -15 V, IC = 5 A RGoff = 68 Fall time tf 15 25 mWs 0.7 - VCC = 600 V, VGE = -15 V, IC = 5 A RGoff = 68 Total turn-off loss energy Eoff VCC = 600 V, VGE = -15 V, IC = 5 A RGoff = 68 , Tj = 25 C Free-Wheel Diode Diode forward voltage VF 2.3 1.9 3 - V IF = 4 A, VGE = 0 V, Tj = 25 C IF = 4 A, VGE = 0 V, Tj = 125 C Reverse recovery time trr ns IF = 4 A, VR = -300 V, VGE = 0 V diF/dt = -800 A/s Tj = 25 C Tj = 125 C Reverse recovery charge 60 100 C Qrr IF = 4 A, VR = -300 V, VGE = 0 V diF/dt = -800 A/s Tj = 25 C Tj = 125 C 3 1 1.8 Semiconductor Group Dec-02-1996 BUP 305 D Power dissipation Ptot = (TC) parameter: Tj 150 C 110 W Collector current IC = (TC) parameter: VGE 15 V , Tj 150 C 12 A 10 Ptot 90 80 70 60 IC 9 8 7 6 50 5 40 30 20 10 0 0 20 40 60 80 100 120 C 160 4 3 2 1 0 0 20 40 60 80 100 120 C 160 TC TC Safe operating area IC = (VCE) parameter: D = 0, TC = 25C , Tj 150 C 10 2 Transient thermal impedance Zth JC = (tp) parameter: D = tp / T 10 1 IGBT A t = 25.0s p K/W IC 10 1 100 s ZthJC 10 0 10 0 1 ms 10 -1 D = 0.50 0.20 0.10 10 ms 10 -1 DC 10 -2 single pulse 0.05 0.02 0.01 10 -2 0 10 10 1 10 2 10 3 V 10 -3 -5 10 10 -4 10 -3 10 -2 10 -1 s 10 0 VCE tp Semiconductor Group 4 Dec-02-1996 BUP 305 D Typ. output characteristics Typ. transfer characteristics IC = f(VCE) parameter: tp = 80 s, Tj = 125 C IC = f (VGE) parameter: tP = 80 s, VCE = 20 V, Tj = 25 C Typ. saturation characteristics Typ. saturation characteristics VCE(sat) = f (VGE) parameter: Tj = 25 C VCE(sat) = f (VGE) parameter: Tj = 125 C Semiconductor Group 5 Dec-02-1996 BUP 305 D Typ. gate charge VGE = (QGate) parameter: IC puls = 6 A 20 V Typ. capacitances C = f (VCE) parameter: VGE = 0 V, f = 1 MHz VGE 16 400 V 14 12 10 8 6 4 2 0 0 10 20 30 40 50 800 V nC 65 Q Gate Short circuit safe operating area Reverse biased safe operating area ICsc = f (VCE) , Tj = 150C parameter: VGE = 15 V, tsc 10 s, L < 25 nH 10 ICpuls = f (VCE) , Tj = 150C parameter: VGE = 15 V 2.5 I Csc/I C(90C) ICpuls/IC 6 1.5 4 1.0 2 0.5 0 0 200 400 600 800 1000 1200 V 1600 0.0 0 200 400 600 800 1000 1200 V 1600 Semiconductor Group 6 Dec-02-1996 BUP 305 D Typ. switching time t = f (RG), inductive load, Tj = 125 C parameter: VCE = 600 V, VGE = 15 V, IC = 5 A Typ. forward characteristics IF = f (VF) parameter: Tj 10 A Transient thermal impedance Zth JC = (tp) parameter: D = tp / T 10 1 Diode K/W IF 8 7 6 ZthJC 10 0 Tj=125C 5 Tj=25C D = 0.50 4 10 -1 3 2 single pulse 1 0 0.0 0.5 1.0 1.5 2.0 V 3.0 10 -2 -5 10 -4 -3 -2 0.20 0.10 0.05 0.02 0.01 10 10 10 10 -1 s 10 0 VF tp Semiconductor Group 7 Dec-02-1996 |
Price & Availability of BUP305
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |